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| FDI025N06 N-Channel PowerTrench(R) MOSFET June 2008 FDI025N06 60V, 265A, 2.5m Features N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. (R) tm * RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handling capability * RoHS compliant Application * DC to DC convertors / Synchronous Rectification D TO-262 GDS FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 60 20 265* 190* 1060 2531 3.5 395 2.6 -55 to +175 300 Units V V A A A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.38 0.5 62.5 o Units C/W (c)2008 Fairchild Semiconductor Corporation FDI025N06 Rev. A 1 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDI025N06 Device FDI025N06 Package TO-262 Reel Size Tape Width Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC= 25oC ID = 250A, Referenced to 25oC VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V 60 0.04 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 75A (Note 4) 2.5 - 3.5 1.9 200 4.5 2.5 - V m S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 48V, ID = 75A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 11190 1610 750 174 54 50 14885 2140 1125 226 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 25 (Note 4, 5) - 134 324 348 250 278 658 706 510 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s (Note 4) - 69 152 265 1060 1.3 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDI025N06 Rev. A 2 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 700 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Figure 2. Transfer Characteristics 1000 *Notes: 1. VDS = 20V 2. 250s Pulse Test ID,Drain Current[A] 100 ID,Drain Current[A] 100 175 C 25 C o o 10 *Notes: 1. 250s Pulse Test 2. TC = 25 C o 10 -55 C o 1 0.01 0.1 VDS,Drain-Source Voltage[V] 1 1 2 3 4 5 6 VGS,Gate-Source Voltage[V] 7 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 IS, Reverse Drain Current [A] RDS(ON) [m], Drain-Source On-Resistance 175 C o 2.5 VGS = 10V 100 2.0 VGS = 20V 25 C o 10 *Notes: 1. VGS = 0V 2. 250s Pulse Test 1.5 *Note: TC = 25 C o 1.0 0 100 200 300 ID, Drain Current [A] 400 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 16000 Ciss *Note: 1. VGS = 0V 2. f = 1MHz Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 15V VDS = 30V VDS = 48V 8 12000 Capacitances [pF] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6 Coss 8000 4 4000 Crss 2 *Note: ID = 75A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 60 0 40 80 120 160 Qg, Total Gate Charge [nC] 200 FDI025N06 Rev. A 3 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.15 Figure 8. On-Resistance Variation vs. Temperature 2.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.6 1.05 1.2 1.00 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 0.95 *Notes: 1. VGS = 10V 2. ID = 75A 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.4 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 300 1000 10s 250 ID, Drain Current [A] 200 150 100 50 0 25 ID, Drain Current [A] 100 100s 1ms 10ms DC 10 Operation in This Area is Limited by R DS(on) *Notes: Limited by package 1 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 0.1 1 10 VDS, Drain-Source Voltage [V] 100 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZJC] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t1 t2 o *Notes: 0.01 10 -4 -3 -2 1. ZJC(t) = 0.38 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 0.005 -5 10 10 10 10 Rectangular Pulse Duration [sec] -1 1 10 FDI025N06 Rev. A 4 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDI025N06 Rev. A 5 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDI025N06 Rev. A 6 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions Dimensions in Millimeters FDI025N06 Rev. A 7 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDI025N06 Rev. A 8 www.fairchildsemi.com |
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